Semiconductor structure and method of forming thereof

Some embodiments relate to a semiconductor structure including a semiconductor substrate, and n interconnect structure disposed over the semiconductor substrate. The interconnect structure includes a dielectric structure and a plurality of metal lines that are stacked over one another in the dielect...

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Bibliographische Detailangaben
Hauptverfasser: LI, ZHENG-XUN, YAUNG, DUN-NIAN, KAO, MIN-FENG, LIN, HSINGIH, LIU, JENNG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:Some embodiments relate to a semiconductor structure including a semiconductor substrate, and n interconnect structure disposed over the semiconductor substrate. The interconnect structure includes a dielectric structure and a plurality of metal lines that are stacked over one another in the dielectric structure. A through substrate via (TSV) extends through the semiconductor substrate to contact a metal line of the plurality of metal lines. A protective sleeve is disposed along outer sidewalls of the TSV and separates the outer sidewalls of the TSV from the dielectric structure of the interconnect structure.