METHOD OF FABRICATING A VCSEL DEVICE AND VCSEL DEVICE

A method of fabricating a Vertical Cavity Surface Emitting Laser (VCSEL) device (100) comprises: providing a first structure (112) comprising a VCSEL layer structure (114) on a wafer (116), the VCSEL layer structure including the wafer comprising one or more semiconductor materials, the first structure having a non-planar first structure top surface (118) with varying height levels along the non-planar top surface, wherein the non-planar first structure top surface comprises one or more electrical contact areas (120) at different height levels above the wafer; applying one or more layers of cover material (128) different from the one or more semiconductor materials on the non-planar first structure top surface along the non-planar first structure top surface with a thickness such that a lowest height level (130) of a cover material top surface (132) is at least equal to or above the highest height level (134) of the non-planar first structure top surface, to obtain a second structure (136) comprising the firs