TWI744438B

Provided is a solid-state image sensor that has good red light sensitivity to efficiently reflect red light passing through a photoelectric conversion element toward the photoelectric conversion element and achieves easy substrate handling during sensor formation. In the solid-state image sensor, photoelectric conversion elements 21 are two-dimensionally arranged in a semiconductor layer (20). The semiconductor layer (20) is provided on a support substrate (10). An interlayer insulating layer (22) and light reflection structures (14) are provided on a surface of the support substrate (10). The light reflection structures (14) include a light transmission layer (11) and a reflective metal (12) having a concave curved surface and covering a surface of the light transmission layer (11). The light reflection structures (14) are provided on a back surface side of the respective photoelectric conversion elements (21). The interlayer insulating layer (22) is located between adjacent ones of the light reflection stru