TWI743989B

Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method that can polish a semiconductor substrate containing an electric conductor metal, such as tungsten or cobalt, flat and at high speed, and reduce post-polishing surface defects. The chemical mechanical...

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Bibliographische Detailangaben
Hauptverfasser:	KAMEI, YASUTAKA, WANG, PENGYU, YAMADA, YUUYA, SUGIE, NORIHIKO
Format:	Patent
Sprache:	chi
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method that can polish a semiconductor substrate containing an electric conductor metal, such as tungsten or cobalt, flat and at high speed, and reduce post-polishing surface defects. The chemical mechanical polishing composition contains (A) silica particles having the functional group represented by general formula (1), and (B) at least one selected from the group consisting of a carboxylic acid having an unsaturated bond and a salt thereof. (1): -COO-M+ (M+ represents a monovalent cation.)