Nucleation structure suitable for the epitaxial growth of three-dimensional semiconductor elements

A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and de...

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Bibliographische Detailangaben
Hauptverfasser:	HYOT, BERANGERE, AMSTATT, BENOIT, HENAFF, EWEN, DUPONT, FLORIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT THEREOF MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.