Silicon-based component with at least one chamfer and its fabrication method
The invention relates to a silicon-based component with at least one chamfer formed from a method combining at least one oblique side wall etching step with a "Bosch" etching of vertical side walls, thereby enabling aesthetic improvement and improvement in the mechanical strength of compon...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention relates to a silicon-based component with at least one chamfer formed from a method combining at least one oblique side wall etching step with a "Bosch" etching of vertical side walls, thereby enabling aesthetic improvement and improvement in the mechanical strength of components formed by micromachining a silicon-based wafer. |
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