TWI735655B

TWI735655B

A proximity exposure method, wherein a mask (M) of which the master patterns (31) are formed larger than the resolution limit of the resist (R) is prepared with respect to the resist patterns (43) having the minimum pitch (P) equal to or smaller than the resolution limit of the resist (R); in the fi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HARADA, TOMONORI, TOGASHI, TAKUMI
Format: Patent
Sprache:chi
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A proximity exposure method, wherein a mask (M) of which the master patterns (31) are formed larger than the resolution limit of the resist (R) is prepared with respect to the resist patterns (43) having the minimum pitch (P) equal to or smaller than the resolution limit of the resist (R); in the first exposure step, the mask (M) and the workpiece (W) are relatively step-moved by the pitch (P) of the resist patterns (43) after the mask patterns (31) are exposed and transferred onto the workpiece (W); and in the second exposure step, the mask patterns (31) are exposed and transferred onto the workpiece (W) again.