Small-pitch image sensor

Image sensor includes a first semiconductor material and a plurality of first doped regions disposed in the semiconductor material. The plurality of first doped regions is part of a plurality of photodiodes to receive light and convert the light into image charge. A second semiconductor material is...

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Bibliographische Detailangaben
Hauptverfasser: VENEZIA, VINCENT, LIU, YUANLIANG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:Image sensor includes a first semiconductor material and a plurality of first doped regions disposed in the semiconductor material. The plurality of first doped regions is part of a plurality of photodiodes to receive light and convert the light into image charge. A second semiconductor material is disposed on the first semiconductor material, and a plurality of second doped regions is disposed in the second semiconductor. The plurality of second doped regions is electrically coupled to the plurality of first doped regions, and the plurality of second doped regions is part of the plurality of photodiodes.