System and method for evaluating the critical dimension of semiconductor element

Systems and methods for evaluating critical dimensions of a semiconductor device are provided. The semiconductor device includes a first layer comprising a first set of overlay markings and a second layer comprising a second set of overlay markings. The second layer is higher than the first layer. T...

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Bibliographische Detailangaben
1. Verfasser:	FENG, YAOBIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HANDLING RECORD CARRIERS MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS PRESENTATION OF DATA RECOGNITION OF DATA RECORD CARRIERS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	Systems and methods for evaluating critical dimensions of a semiconductor device are provided. The semiconductor device includes a first layer comprising a first set of overlay markings and a second layer comprising a second set of overlay markings. The second layer is higher than the first layer. The first set of overlay markings includes a plurality of diffraction gratings. Each of the plurality of diffraction gratings has a first period. The second set of overlay markings includes a plurality diffraction grating clusters. Each of the plurality of diffraction grating clusters has a plurality of diffraction grating units. The plurality of diffraction grating units in at least one of the plurality of diffraction grating clusters have the first period. At least one of the plurality of diffraction grating units includes a diffraction grating having a second period that is smaller than the first period.