EUV REFLECTIVE STRUCTURE, EUV COLLECTOR AND EUV RETICLE

An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.

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Bibliographische Detailangaben
Hauptverfasser:	KOAI, KUANG KUO, KU, BENNY, CHENG, WEN HAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.