TWI721955B

[Problem] To provide a method for effectively removing minute impurities of 1 µm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface. [Solution] A surface of an aluminum nitride single-crystal substrate is scrubbed using a polymer...

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1. Verfasser:	ARIYUKI, MASAO
Format:	Patent
Sprache:	chi
Schlagworte:	BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING
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creator	ARIYUKI, MASAO
description	[Problem] To provide a method for effectively removing minute impurities of 1 µm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface. [Solution] A surface of an aluminum nitride single-crystal substrate is scrubbed using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass% concentration of an alkali selected from the group consisting of potassium hydroxide and sodium hydroxide, said alkali aqueous solution being absorbed in the polymer compound material.
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[Solution] A surface of an aluminum nitride single-crystal substrate is scrubbed using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass% concentration of an alkali selected from the group consisting of potassium hydroxide and sodium hydroxide, said alkali aqueous solution being absorbed in the polymer compound material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PERFORMING OPERATIONS</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAKCfc0NzK0NDV14mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8QgNTsZEKAEAC6MbiA</recordid><startdate>20210321</startdate><enddate>20210321</enddate><creator>ARIYUKI, MASAO</creator><scope>EVB</scope></search><sort><creationdate>20210321</creationdate><title>TWI721955B</title><author>ARIYUKI, MASAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI721955BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLEANING</topic><topic>CLEANING IN GENERAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PERFORMING OPERATIONS</topic><topic>PREVENTION OF FOULING IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>ARIYUKI, MASAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ARIYUKI, MASAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TWI721955B</title><date>2021-03-21</date><risdate>2021</risdate><abstract>[Problem] To provide a method for effectively removing minute impurities of 1 µm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface. [Solution] A surface of an aluminum nitride single-crystal substrate is scrubbed using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass% concentration of an alkali selected from the group consisting of potassium hydroxide and sodium hydroxide, said alkali aqueous solution being absorbed in the polymer compound material.</abstract><oa>free_for_read</oa></addata></record>
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title	TWI721955B
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