TWI721955B

[Problem] To provide a method for effectively removing minute impurities of 1 µm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface. [Solution] A surface of an aluminum nitride single-crystal substrate is scrubbed using a polymer...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	ARIYUKI, MASAO
Format:	Patent
Sprache:	chi
Schlagworte:	BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	[Problem] To provide a method for effectively removing minute impurities of 1 µm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface. [Solution] A surface of an aluminum nitride single-crystal substrate is scrubbed using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass% concentration of an alkali selected from the group consisting of potassium hydroxide and sodium hydroxide, said alkali aqueous solution being absorbed in the polymer compound material.