Vapor deposition apparatus

The invention provides a vapor deposition apparatus which can reduce the difference between the temperature of a substrate, a vapor deposition mask and the like to be adjusted and a target temperature. At least one of the substrate (W) and the vapor deposition mask (M) is an object to be adjusted in...

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Bibliographische Detailangaben
Hauptverfasser:	YANAGIHORI, FUMITSUGU, YOSHIDA, YUICHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention provides a vapor deposition apparatus which can reduce the difference between the temperature of a substrate, a vapor deposition mask and the like to be adjusted and a target temperature. At least one of the substrate (W) and the vapor deposition mask (M) is an object to be adjusted in temperature, and the vapor deposition apparatus is provided with: a resistance heater (22) that adjusts the temperature of the object to be adjusted in thermal contact with the object to be adjusted; and a temperature adjustment unit (33) that controls the current supplied to the resistance heater(22) on the basis of the temperature of the object to be adjusted. The temperature higher than the temperature of the object to be adjusted when the object to be adjusted is carried into a vacuum tank(16) is the target temperature of the object to be adjusted. The temperature adjustment unit (33) sets the target temperature at which the vapor deposition material is discharged from a vapor deposition source (11) to a tempe