Device and method for producing a lateral hemt

Device and method for producing a lateral hemt

Device (100, 200, 300, 400) comprising a lateral HEMT, wherein the lateral HEMT comprises at least one buffer layer (101, 201, 301, 401), on which a further semi-conductor layer (102,202,302,402) is arranged, wherein a first electrode (103, 203, 303, 403), a gate electrode (104, 204, 304, 404) and a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JAUSS, SIMON ALEXANDER, SCHWAIGER, STEPHAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Device (100, 200, 300, 400) comprising a lateral HEMT, wherein the lateral HEMT comprises at least one buffer layer (101, 201, 301, 401), on which a further semi-conductor layer (102,202,302,402) is arranged, wherein a first electrode (103, 203, 303, 403), a gate electrode (104, 204, 304, 404) and a second electrode (105, 205, 305, 405) are arranged on the further semiconductor layer (102, 202, 302, 402), characterized in that a first field plate (109, 209, 309, 409) is arranged below the buffer layer (101, 201, 301, 401), wherein the first field plate (109, 209, 309, 409) at least partly adjoins the buffer layer (101, 201, 301, 401).