Chemical mechanical polishing pad composite polishing layer formulation

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a p...

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Bibliographische Detailangaben
Hauptverfasser:	BRUGAROLAS BRUFAU, TERESA, LUGO, DIEGO, QIAN, BAINIAN, HENDRON, JEFFREY JAMES, TRAN, TONY QUAN, JACOB, GEORGE C, KOZHUKH, JULIA, MILLER, JEFFREY B, STACK, MARC R
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING
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Beschreibung
Zusammenfassung:	A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ≦6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ≧10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.