Semiconductor device and method for fabricating the same

A semiconductor device includes a substrate, a channel layer, a first electrode layer, a second electrode layer, and a gate structure. The substrate includes a first gallium oxide layer. The channel layer is disposed on the substrate, wherein the channel layer is a second gallium oxide layer. The fi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUANG, SHIN-YI, LEE, HENG, CHANG, TAOIH
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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