Semiconductor device and method for fabricating the same

A semiconductor device includes a substrate, a channel layer, a first electrode layer, a second electrode layer, and a gate structure. The substrate includes a first gallium oxide layer. The channel layer is disposed on the substrate, wherein the channel layer is a second gallium oxide layer. The fi...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HUANG, SHIN-YI, LEE, HENG, CHANG, TAOIH
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A semiconductor device includes a substrate, a channel layer, a first electrode layer, a second electrode layer, and a gate structure. The substrate includes a first gallium oxide layer. The channel layer is disposed on the substrate, wherein the channel layer is a second gallium oxide layer. The first electrode layer and the second electrode layer are disposed on the channel layer. The gate structure is disposed on the channel layer between the first electrode layer and the second electrode layer. The gate structure is on the channel layer or the gate structure has a bottom portion extending into the channel.