Transistor element including a buried insulating layer having enhanced functionality

Transistor element including a buried insulating layer having enhanced functionality

In sophisticated SOI transistor elements, the buried insulating layer may be specifically engineered so as to include non-standard dielectric materials. For instance, a charge-trapping material and/or a high-k dielectric material and/or a ferroelectric material may be incorporated into the buried in...

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Bibliographische Detailangaben
Hauptverfasser: POTH, JOCHEN WILLI, RICHTER, RALF, WU, ZHI-YUAN, CHANDRASHEKHAR, SANDHYA, BEYER, SVEN, DUENKEL, STEFAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:In sophisticated SOI transistor elements, the buried insulating layer may be specifically engineered so as to include non-standard dielectric materials. For instance, a charge-trapping material and/or a high-k dielectric material and/or a ferroelectric material may be incorporated into the buried insulating layer. In this manner, non-volatile storage transistor elements with superior performance may be obtained and/or efficiency of a back-bias mechanism may be improved.