TWI690777B

To exposure patterns with different sizes to a substrate at high position accuracy without largely increasing facility or process.SOLUTION: An exposure system has a marking device C forming a plurality of substrate marks at a prescribed interval in a photoresist applied to a substrate, and a plurality of exposure devices A and B. The plurality of exposure devices A and B detect deviation amount between a mask mark and a substrate mark from images of the mask mark and the substrate mark obtained by an image acquisition device respectively, a position of a stage is detected using a laser measure device, positioning of the mask mark and the substrate mark is conducted depending on the deviation amount between the detected mask mark and substrate mark to conduct relative positioning between the mask and the substrate, then a position where the pattern is exposed to the substrate is controlled based on a detection result of the laser measurement device, and then exposure of the pattern is conducted to the substrat