Method for manufacturing deposition mask

The present invention is a method for manufacturing film formation mask for performing: a step for forming, on either the front or back surface of a laser-machinable resin film 4, a resin support layer 2 that is made of a resin material different from said film 4 and that absorbs laser light L1 of a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KUDO, SHUJI, KOBAYASHI, IKUNORI, KIMURA, ERIKO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	The present invention is a method for manufacturing film formation mask for performing: a step for forming, on either the front or back surface of a laser-machinable resin film 4, a resin support layer 2 that is made of a resin material different from said film 4 and that absorbs laser light L1 of a shorter wavelength than visible light; a step for forming a pore pattern 3 that penetrates said film 4 by irradiating laser light L1 from the surface of said film 4 that is opposite to the surface on which said support layer 2 is formed; and a step for selectively removing said support layer 2 from said film 4. As a result, the occurrence of burrs at the edges of the pore pattern is limited using a simple process.