High-voltage metal-oxide-semiconductor transistor and fabrication method thereof
A high-voltage MOS transistor includes a semiconductor substrate, a gate oxide layer on the semiconductor substrate, a gate on the gate oxide layer, a spacer covering a sidewall of the gate, a source on one side of the gate, and a drain on the other side of the gate. The gate includes at least a fir...
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| creator | WANG, CHIHUNG CHANG, KAI-KUEN CHIANG, PING-HUNG LEE, WEN-FANG LI, NIENUNG YANG, CHINGUNG HSIAO, SHIH-YIN LIU, KUAN-LIANG |
| description | A high-voltage MOS transistor includes a semiconductor substrate, a gate oxide layer on the semiconductor substrate, a gate on the gate oxide layer, a spacer covering a sidewall of the gate, a source on one side of the gate, and a drain on the other side of the gate. The gate includes at least a first discrete segment and a second discrete segment. The first discrete segment is not in direct contact with the second discrete segment. The spacer fills into a gap between the first discrete segment and the second discrete segment. |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | High-voltage metal-oxide-semiconductor transistor and fabrication method thereof |
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