High-voltage metal-oxide-semiconductor transistor and fabrication method thereof

High-voltage metal-oxide-semiconductor transistor and fabrication method thereof

A high-voltage MOS transistor includes a semiconductor substrate, a gate oxide layer on the semiconductor substrate, a gate on the gate oxide layer, a spacer covering a sidewall of the gate, a source on one side of the gate, and a drain on the other side of the gate. The gate includes at least a fir...

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Bibliographische Detailangaben
Hauptverfasser: WANG, CHIHUNG, CHANG, KAI-KUEN, CHIANG, PING-HUNG, LEE, WEN-FANG, LI, NIENUNG, YANG, CHINGUNG, HSIAO, SHIH-YIN, LIU, KUAN-LIANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A high-voltage MOS transistor includes a semiconductor substrate, a gate oxide layer on the semiconductor substrate, a gate on the gate oxide layer, a spacer covering a sidewall of the gate, a source on one side of the gate, and a drain on the other side of the gate. The gate includes at least a first discrete segment and a second discrete segment. The first discrete segment is not in direct contact with the second discrete segment. The spacer fills into a gap between the first discrete segment and the second discrete segment.