Method of fabricating a metal-oxide-semiconductor device

A method of fabricating a MOS device is disclosed. A substrate having an active area (AA) silicon portion and shallow trench isolation (STI) region surrounding the active area is provided. A hard mask is formed on the substrate. A portion of the hard mask is removed to form an opening on the AA sili...

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Bibliographische Detailangaben
Hauptverfasser:	WANG, CHIHUNG, CHIANG, PING-HUNG, HSIUNG, CHANG-PO, WANG, CHIA-LIN, LEE, WEN-FANG, LI, NIENUNG, HSIAO, SHIH-YIN, PU, SHIHIEH, LIU, KUAN LIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method of fabricating a MOS device is disclosed. A substrate having an active area (AA) silicon portion and shallow trench isolation (STI) region surrounding the active area is provided. A hard mask is formed on the substrate. A portion of the hard mask is removed to form an opening on the AA silicon portion. The opening exposes an edge of the STI region. The AA silicon portion is recessed through the opening to a predetermined depth to form a silicon spacer along a sidewall of the STI region in a self-aligned manner. An oxidation process is performed to oxidize the AA silicon portion and the silicon spacer to form a gate oxide layer.