TWI676696B

A cylindrical sputtering target according to the present invention comprises: a metallic cylindrical substrate; and a ceramic cylindrical target material joined to an outer peripheral side of the cylindrical substrate and integrally formed so as to have a length of 750 mm or more in an axial directi...

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Bibliographische Detailangaben
Hauptverfasser:	TSURUTA, YOSHITAKA, NEGISHI, TOMOYA
Format:	Patent
Sprache:	chi
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A cylindrical sputtering target according to the present invention comprises: a metallic cylindrical substrate; and a ceramic cylindrical target material joined to an outer peripheral side of the cylindrical substrate and integrally formed so as to have a length of 750 mm or more in an axial direction, wherein a variation coefficient of a bulk resistivity in an axial direction is 0.05 or less on the outer peripheral surface of the cylindrical target material.