Gate skirt oxidation for improved finfet performance and method for producing the same

Gate skirt oxidation for improved finfet performance and method for producing the same

A method for controlling the gate length within a FinFET device to increase power performance and the resulting device are provided. Embodiments include forming a vertical gate to extend over a plurality of fins; depositing a respective oxide layer over each of a plurality of skirt regions formed at...

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Bibliographische Detailangaben
Hauptverfasser: ZAINUDDIN, ABU, LEE, TAE JEONG, NASSAR, CHRISTOPHER, PANTISANO, LUIGI, SPORRE, JOHN, GAO, QUN, SIDDIQUI, SHAHAB, ZANG, HUI, KRISHNAMURTHY, SUGIRTHA, LIU, JINPING, BAUMERT, BETH, LAZAR, HEATHER, FERRER LUPPI, DOMINGO ANTONIO
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for controlling the gate length within a FinFET device to increase power performance and the resulting device are provided. Embodiments include forming a vertical gate to extend over a plurality of fins; depositing a respective oxide layer over each of a plurality of skirt regions formed at respective points of intersection of the vertical gate with the plurality of fins; and oxidizing each oxide layer to form a plurality of oxidized gate skirts.