TWI674325B

To provide a target material capable of resolving a problem of a high resistance occurring in an underlayer film of a wiring thin film and an electrode thin film and a problem of a nodule attributed to a surface roughness of a target material in sputtering, and forming a MoNb film suitable for a fla...

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Bibliographische Detailangaben
Hauptverfasser:	UENO, HIDE, SAITO, KAZUYA, FUKUOKA, JUN, AOKI, DAISUKE
Format:	Patent
Sprache:	chi
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	To provide a target material capable of resolving a problem of a high resistance occurring in an underlayer film of a wiring thin film and an electrode thin film and a problem of a nodule attributed to a surface roughness of a target material in sputtering, and forming a MoNb film suitable for a flat image display device capable of obtaining a stable TFT property with a low resistance.SOLUTION: A MoNb target material has a composition consisting of a Nb of 5 atom% to 30 atom%, and a rest of Mo and an inevitable impurity, and less than 1.0 Nb phase having a maximum length of more than 70 μm per 200000 μmof a sputtering surface. An average circle-equivalent diameter of the Nb phase is preferably 15 μm to 65 μm.SELECTED DRAWING: Figure 1