TWI673321B

The present invention relates to a polyimide film in which a dimensional change is reduced, has less difference in the thermal expansion coefficient of MD and TD so as to be isotropic, and is suitable in a semiconductor package use, a semiconductor manufacturing process use, a display use and uses f...

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Bibliographische Detailangaben
Hauptverfasser:	YAMASHITA, SHINSUKE, OGURA, MIKIHIRO, YASUDA, NAOFUMI, YATSUNAMI, YUJI
Format:	Patent
Sprache:	chi
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMISTRY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS PRINTED CIRCUITS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING WORKING-UP
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Beschreibung
Zusammenfassung:	The present invention relates to a polyimide film in which a dimensional change is reduced, has less difference in the thermal expansion coefficient of MD and TD so as to be isotropic, and is suitable in a semiconductor package use, a semiconductor manufacturing process use, a display use and uses for requiring dimensional stability, such as a solar cell substrate and a substrate for a fine pitch circuit. The polyimide film is obtained by using an aromatic diamine ingredient including paraphenylenediamine and an acid anhydride ingredient. Both the thermal expansion coefficient of the film in a machine direction (MD), αMD, and the thermal expansion coefficient of the film in a transverse direction (TD), αTD, are in a range of 0 ppm/℃ or more and less than 7.0 ppm/℃, measured by using TMA-50 of Shimadzu corporation under conditions of a measurement temperature range of 50 to 200 ℃ and a temperature rising rate of 10 ℃/min, and relation of│αMD-αTD│< 3 is satisfied.