Semiconductor device and method of manufacturing the same

The invention relates to a semiconductor device and a manufacturing method thereof; provided is the corrosion resistant semiconductor device including a fuse element that can be cut by laser light. In the semiconductor device, an upper portion of the fuse element is covered with a porous insulating film so that, when laser light radiated from a rear surface of a semiconductor substrate is collected at the fuse element, the fuse element may generate heat, expand, and rupture. A silicon nitride film having a uniform thickness is formed on a front surface of the semiconductor device to prevent moisture from coming therein.