Resist upperlayer film forming composition and semiconductor device manufacturing method using the same

[Problem] To provide a composition for forming a upper-layer resist film used in a lithography process during a step for manufacturing a semiconductor device, the composition not intermixing with the resist, and blocking exposure light, such as UV or DUV, that is undesirable particularly during EUV...

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Bibliographische Detailangaben
Hauptverfasser:	SAKAMOTO, RIKIMARU, FUJITANI, NORIAKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	[Problem] To provide a composition for forming a upper-layer resist film used in a lithography process during a step for manufacturing a semiconductor device, the composition not intermixing with the resist, and blocking exposure light, such as UV or DUV, that is undesirable particularly during EUV exposure, and selectively transmitting only EUV. The composition is capable of being developed using developing fluid after exposure. [Solution] A composition for forming an upper-layer resist film including the unit structure represented in formula (1) and formula (2) shown below, and including: a polymer (P) having a weight-average molecular weight of 500-2000 according to GPC; and, as a solvent, a C8-16 ether compound.