Interconnect structure, manufacturing method thereof and semiconductor structure

Interconnect structure, manufacturing method thereof and semiconductor structure

An interconnect structure including a conductive layer, a spacer, a dielectric layer and a contact is provided. The conductive layer is disposed on a substrate. The spacer is disposed on a sidewall of the conductive layer. The dielectric layer covers the conductive layer and the spacer. The contact...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: CHIANG, MINGUNG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An interconnect structure including a conductive layer, a spacer, a dielectric layer and a contact is provided. The conductive layer is disposed on a substrate. The spacer is disposed on a sidewall of the conductive layer. The dielectric layer covers the conductive layer and the spacer. The contact is disposed in the dielectric layer and located on the conductive layer.