Ic structure on two sides of substrate and method of forming

An integrated circuit (IC) structure uses a single semiconductor substrate having a first side and an opposing, second side. A first plurality of active devices are positioned on the first side of the single semiconductor substrate, and a second plurality of active devices are positioned on the oppo...

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Bibliographische Detailangaben
Hauptverfasser: MELVILLE, IAN D. W, FAROOQ, MUKTA G
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:An integrated circuit (IC) structure uses a single semiconductor substrate having a first side and an opposing, second side. A first plurality of active devices are positioned on the first side of the single semiconductor substrate, and a second plurality of active devices are positioned on the opposing, second side of the single semiconductor substrate. A TSV may electrically couple active devices on either side. Use of a single semiconductor substrate with active devices on both sides reduces the number of semiconductor layers used and allows annealing without damaging BEOL interconnects during fabrication.