Semiconductor structure and manufacturing method thereof
A manufacturing method of a semiconductor structure includes the following steps. Gate trenches are formed in a first dielectric layer on a semiconductor substrate. A sidewall spacer layer is formed on the semiconductor substrate and on at least two sides of each gate trench. A plurality of first me...
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| Zusammenfassung: | A manufacturing method of a semiconductor structure includes the following steps. Gate trenches are formed in a first dielectric layer on a semiconductor substrate. A sidewall spacer layer is formed on the semiconductor substrate and on at least two sides of each gate trench. A plurality of first metal gates is formed on the semiconductor substrate. Each of the first metal gates includes an upper part and a lower part connected to the upper part, the lower part is formed in one of the gate trenches, and the upper part covers at least a part of the sidewall spacer layer in a vertical direction. The upper part and the lower part of the first metal gate are formed by an identical process together. |
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