Magnetic memory device and method for manufacturing the same

Magnetic memory device and method for manufacturing the same

According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-con...

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Bibliographische Detailangaben
Hauptverfasser: OHSAWA, YUICHI, YODA, HIROAKI, SHIROTORI, SATOSHI, SHIMIZU, MARIKO, SHIMOMURA, NAOHARU, BUYANDALAI, ALTANSARGAI, SUGIYAMA, HIDEYUKI
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.