Crystal growing systems and crucibles for enhancing heat transfer to a melt

A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cav...

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Bibliographische Detailangaben
Hauptverfasser:	SWAMINATHAN, TIRUMANI N, ZEPEDA, SALVADOR, HILKER, JOHN DAVID
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.