TWI651597B

An exposure method forms an immersion area in at least a part of a substrate including a projection area of a projection optical system and projects an image of a mask pattern onto the substrate through liquid between the projection optical system and the substrate. Distribution of the mask pattern...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	HIRUKAWA, SHIGERU
Format:	Patent
Sprache:	chi
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An exposure method forms an immersion area in at least a part of a substrate including a projection area of a projection optical system and projects an image of a mask pattern onto the substrate through liquid between the projection optical system and the substrate. Distribution of the mask pattern is measured (S1) and adjustment is made so that a desired image of the pattern is projected onto the substrate according to distribution of the exposure light incident into the liquid between the projection optical system and the substrate when exposing the substrate (S4 to S6). It is possible to expose the substrate with the pattern accurately regardless of the distribution of the mask pattern.