WAFER PROCESS APPARATUS AND METHOD FOR PROCESSING SEMICONDUCTOR WAFER

Embodiments of mechanisms for processing a semiconductor wafer are provided. A method for processing a wafer includes providing a wafer process apparatus. The wafer process apparatus includes a chamber and a stage positioned in the chamber for supporting the semiconductor wafer. The method also incl...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	CHANG, CHIA JUI, CHANG, SHIH CHIEH, LIN, JENG HAO, LIN, CHIEN FENG, YANG, HUAI TEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Embodiments of mechanisms for processing a semiconductor wafer are provided. A method for processing a wafer includes providing a wafer process apparatus. The wafer process apparatus includes a chamber and a stage positioned in the chamber for supporting the semiconductor wafer. The method also includes heating a pre-heating assembly positioned at an outer side in a circumferential direction. The pre-heating assembly includes a number of flow channels defined by two neighboring rib structures. The method further includes supplying a process gas to the semiconductor wafer on the stage via the channels.