Ternary content addressable memory (tcam) for multi bit miss detect circuit

Ternary content addressable memory (tcam) for multi bit miss detect circuit

The present disclosure relates to a pre-charge circuit including a first inverter which receives an early pre-charge signal and outputs an inverted early pre-charge signal, a first gate which receives a late pre-charge signal and a match line output signal and outputs an AND output signal, and a sec...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ARSOVSKI, IGOR, BUTLER, VAN D, PATIL, AKHILESH, FRAGANO, MICHAEL T, HOULE, ROBERT M
Format: Patent
Sprache:chi ; eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:The present disclosure relates to a pre-charge circuit including a first inverter which receives an early pre-charge signal and outputs an inverted early pre-charge signal, a first gate which receives a late pre-charge signal and a match line output signal and outputs an AND output signal, and a second gate which receives the inverted early pre-charge signal and the AND output signal and outputs an effective pre-charge signal.