$Diffractive overlay mark$

Diffractive overlay mark

A method and apparatus for calculating overlay based on high order diffraction phase measurements are provided. Embodiments include forming a first diffraction pattern in a first layer of a wafer; forming a second diffraction pattern in a second layer of the wafer, the second layer being formed over...

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Bibliographische Detailangaben
1. Verfasser:	TANG, MING HAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A method and apparatus for calculating overlay based on high order diffraction phase measurements are provided. Embodiments include forming a first diffraction pattern in a first layer of a wafer; forming a second diffraction pattern in a second layer of the wafer, the second layer being formed over the first layer; detecting a first or a higher odd order signal in an X and a Y direction from each of the first and second diffraction patterns; calculating a peak for each signal; measuring a delta value between peaks of the signals in the X direction and a delta value between peaks of the signals in the Y direction; and calculating an overlay between the first and second layers based on the delta values.