TWI620245B
An etching method includes a modification process of supplying a mixture gas to a surface of a silicon oxide film, modifying the silicon oxide film to generate a reaction product, and a heating process of heating and removing the reaction product. The modification process includes a first modificati...
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| creator | TOZAWA, SHIGEKI OGIWARA, TOMOAKI |
| description | An etching method includes a modification process of supplying a mixture gas to a surface of a silicon oxide film, modifying the silicon oxide film to generate a reaction product, and a heating process of heating and removing the reaction product. The modification process includes a first modification process of supplying the mixture gas containing a gas including a halogen element and an alkaline gas to the surface of the silicon oxide film, and a second modification process of stopping supplying the alkaline gas and supplying the mixture gas containing the gas including the halogen element to the surface of the silicon oxide film. |
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The modification process includes a first modification process of supplying the mixture gas containing a gas including a halogen element and an alkaline gas to the surface of the silicon oxide film, and a second modification process of stopping supplying the alkaline gas and supplying the mixture gas containing the gas including the halogen element to the surface of the silicon oxide film.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAKCfc0MzIwMjF14mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8QgNTsZEKAEABkAbag</recordid><startdate>20180401</startdate><enddate>20180401</enddate><creator>TOZAWA, SHIGEKI</creator><creator>OGIWARA, TOMOAKI</creator><scope>EVB</scope></search><sort><creationdate>20180401</creationdate><title>TWI620245B</title><author>TOZAWA, SHIGEKI ; OGIWARA, TOMOAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI620245BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TOZAWA, SHIGEKI</creatorcontrib><creatorcontrib>OGIWARA, TOMOAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TOZAWA, SHIGEKI</au><au>OGIWARA, TOMOAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TWI620245B</title><date>2018-04-01</date><risdate>2018</risdate><abstract>An etching method includes a modification process of supplying a mixture gas to a surface of a silicon oxide film, modifying the silicon oxide film to generate a reaction product, and a heating process of heating and removing the reaction product. The modification process includes a first modification process of supplying the mixture gas containing a gas including a halogen element and an alkaline gas to the surface of the silicon oxide film, and a second modification process of stopping supplying the alkaline gas and supplying the mixture gas containing the gas including the halogen element to the surface of the silicon oxide film.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | TWI620245B |
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