TWI620245B
An etching method includes a modification process of supplying a mixture gas to a surface of a silicon oxide film, modifying the silicon oxide film to generate a reaction product, and a heating process of heating and removing the reaction product. The modification process includes a first modificati...
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| Zusammenfassung: | An etching method includes a modification process of supplying a mixture gas to a surface of a silicon oxide film, modifying the silicon oxide film to generate a reaction product, and a heating process of heating and removing the reaction product. The modification process includes a first modification process of supplying the mixture gas containing a gas including a halogen element and an alkaline gas to the surface of the silicon oxide film, and a second modification process of stopping supplying the alkaline gas and supplying the mixture gas containing the gas including the halogen element to the surface of the silicon oxide film. |
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