TWI599677B

The invention first relates to a device and a method for depositing semiconductor layers, in particular III - V semiconductor layers, comprising a processing chamber (2) which is arranged in a reactor housing (1) and into which a gas supply line (3) opens, a process gas being introducible into the processing chamber (2) together with a carrier gas through said gas supply line. The device comprises a first temperature control device (4) with which the operating temperature of the processing chamber (2) can be stabilized to a processing temperature at which a reaction of the process gas takes place, wherein at least gaseous reaction products are formed during the reaction. The processing chamber (2) is connected to a gas discharge line (5) with a cooling trap (6) and a filter device (7). The aim of the invention is to increase the efficiency of an exhaust gas system in a device of the generic type. This is achieved in that the filter device (7) is arranged upstream of the cooling trap (6). The invention further