MULTILAYER CROWN-SHAPED MIM CAPACITOR AND MANUFACTURING METHOD THEREOF

A method for fabricating a multi-layer, crown-shaped MIM capacitor is provided. A base having therein a conductive region within a capacitor-forming region is formed. An IMD layer is deposited on the base to cover the capacitor-forming region. A capacitor trench is formed within the capacitor-formin...

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Bibliographische Detailangaben
Hauptverfasser: CHE, SHYNG-YEUAN, WONG, WEN-YI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A method for fabricating a multi-layer, crown-shaped MIM capacitor is provided. A base having therein a conductive region within a capacitor-forming region is formed. An IMD layer is deposited on the base to cover the capacitor-forming region. A capacitor trench is formed within the capacitor-forming region. The capacitor trench penetrates through the IMD layer, thereby exposing a portion of the conductive region. A concentric capacitor lower electrode structure is formed within the capacitor trench. The concentric capacitor lower electrode structure includes a first electrode and a second electrode surrounded by the first electrode. The first electrode is in direct contact with the conductive region. A conductive supporting pedestal is formed within the capacitor trench for fixing and electrically connecting bottom portions of the first and second electrodes. A capacitor dielectric layer conformally lining the first and second electrodes and a top surface of the conductive supporting pedestal is formed.