P-TYPE METAL OXIDE SEMICONDUCTOR MATERIAL AND TRANSISTOR

A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0

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Bibliographische Detailangaben
Hauptverfasser:	CHENG, HSIN MING, HUANG, TIEN HENG, CHIOU, SHAN HAW, CHOU, TZU CHI, CAI, REN FONG, CHAO, WEN HSUAN, CHANG, MU TUNG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0