Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures

Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures

A semiconductor structure may include a first electrode over a substrate, a high-K dielectric material over the first electrode, and a second electrode over the high-K dielectric material, wherein at least one of the first electrode and the second electrode may include a material selected from the g...

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Bibliographische Detailangaben
Hauptverfasser: REDDY, KOTHA SAI MADHUKAR, ANTONOV, VASSIL, BHAT, VISHWANATH, ROCKLEIN, MATTHEW N
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor structure may include a first electrode over a substrate, a high-K dielectric material over the first electrode, and a second electrode over the high-K dielectric material, wherein at least one of the first electrode and the second electrode may include a material selected from the group consisting of a molybdenum nitride (MoaNb) material, a molybdenum oxynitride (MoOxNy) material, a molybdenum oxide (MoOx) material, and a molybdenum-based alloy material comprising molybdenum and nitrogen.