Semiconductor device and semiconductor process

The present invention relates to a semiconductor device and semiconductor process. The semiconductor device includes a substrate, a circuit layer, a plurality of under bump metal lurgies (UBMs), a redistribution layer and a plurality of interconnection metals. The substrate has an active surface and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: OU, YING TE, HUANG, CHE HAU
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator OU, YING TE
HUANG, CHE HAU
description The present invention relates to a semiconductor device and semiconductor process. The semiconductor device includes a substrate, a circuit layer, a plurality of under bump metal lurgies (UBMs), a redistribution layer and a plurality of interconnection metals. The substrate has an active surface and a inactive surface. The circuit layer and the under bump metallurgies (UBMs) are disposed adjacent to the active surface. The redistribution layer is disposed adjacent to the inactive surface. The interconnection metals electrically connect the circuit layer and redistribution layer.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI559411BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI559411BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI559411BB3</originalsourceid><addsrcrecordid>eNrjZNALTs3NTM7PSylNLskvUkhJLctMTlVIzEtRKEaRKCjKT04tLuZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfEh4Z6mppYmhoZOTsZEKAEA75UrMQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and semiconductor process</title><source>esp@cenet</source><creator>OU, YING TE ; HUANG, CHE HAU</creator><creatorcontrib>OU, YING TE ; HUANG, CHE HAU</creatorcontrib><description>The present invention relates to a semiconductor device and semiconductor process. The semiconductor device includes a substrate, a circuit layer, a plurality of under bump metal lurgies (UBMs), a redistribution layer and a plurality of interconnection metals. The substrate has an active surface and a inactive surface. The circuit layer and the under bump metallurgies (UBMs) are disposed adjacent to the active surface. The redistribution layer is disposed adjacent to the inactive surface. The interconnection metals electrically connect the circuit layer and redistribution layer.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20161121&amp;DB=EPODOC&amp;CC=TW&amp;NR=I559411B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20161121&amp;DB=EPODOC&amp;CC=TW&amp;NR=I559411B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OU, YING TE</creatorcontrib><creatorcontrib>HUANG, CHE HAU</creatorcontrib><title>Semiconductor device and semiconductor process</title><description>The present invention relates to a semiconductor device and semiconductor process. The semiconductor device includes a substrate, a circuit layer, a plurality of under bump metal lurgies (UBMs), a redistribution layer and a plurality of interconnection metals. The substrate has an active surface and a inactive surface. The circuit layer and the under bump metallurgies (UBMs) are disposed adjacent to the active surface. The redistribution layer is disposed adjacent to the inactive surface. The interconnection metals electrically connect the circuit layer and redistribution layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNALTs3NTM7PSylNLskvUkhJLctMTlVIzEtRKEaRKCjKT04tLuZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfEh4Z6mppYmhoZOTsZEKAEA75UrMQ</recordid><startdate>20161121</startdate><enddate>20161121</enddate><creator>OU, YING TE</creator><creator>HUANG, CHE HAU</creator><scope>EVB</scope></search><sort><creationdate>20161121</creationdate><title>Semiconductor device and semiconductor process</title><author>OU, YING TE ; HUANG, CHE HAU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI559411BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OU, YING TE</creatorcontrib><creatorcontrib>HUANG, CHE HAU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OU, YING TE</au><au>HUANG, CHE HAU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and semiconductor process</title><date>2016-11-21</date><risdate>2016</risdate><abstract>The present invention relates to a semiconductor device and semiconductor process. The semiconductor device includes a substrate, a circuit layer, a plurality of under bump metal lurgies (UBMs), a redistribution layer and a plurality of interconnection metals. The substrate has an active surface and a inactive surface. The circuit layer and the under bump metallurgies (UBMs) are disposed adjacent to the active surface. The redistribution layer is disposed adjacent to the inactive surface. The interconnection metals electrically connect the circuit layer and redistribution layer.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_TWI559411BB
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device and semiconductor process
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T23%3A29%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OU,%20YING%20TE&rft.date=2016-11-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI559411BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true