Semiconductor device and semiconductor process

The present invention relates to a semiconductor device and semiconductor process. The semiconductor device includes a substrate, a circuit layer, a plurality of under bump metal lurgies (UBMs), a redistribution layer and a plurality of interconnection metals. The substrate has an active surface and...

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Bibliographische Detailangaben
Hauptverfasser: OU, YING TE, HUANG, CHE HAU
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The present invention relates to a semiconductor device and semiconductor process. The semiconductor device includes a substrate, a circuit layer, a plurality of under bump metal lurgies (UBMs), a redistribution layer and a plurality of interconnection metals. The substrate has an active surface and a inactive surface. The circuit layer and the under bump metallurgies (UBMs) are disposed adjacent to the active surface. The redistribution layer is disposed adjacent to the inactive surface. The interconnection metals electrically connect the circuit layer and redistribution layer.