Method for wafer dicing and composition useful thereof

A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organi...

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Bibliographische Detailangaben
Hauptverfasser:	TAMBOLI, DNYANESH CHANDRAKANT, RAMAMURTHI, RAJKUMAR, PARRIS, GENE EVERAD, RAO, MADHUKAR BHASKARA, BANERJEE, GAUTAM, RENNIE, DAVID BARRY
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NATURAL RESINS NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water. The composition has a pH greater than 4. The solution can further comprise a chelating agent, a defoaming agent, or a dispersing agent.