HIGH PERFORMANCE SELF ALIGNED CONTACTS AND METHOD OF FORMING SAME

HIGH PERFORMANCE SELF ALIGNED CONTACTS AND METHOD OF FORMING SAME

A method embodiment includes forming a protective liner over the substrate and forming an inter-layer dielectric over the protective liner. The protective liner covers a sidewall of a gate spacer. The method further includes patterning a contact opening in the first ILD to expose a portion of the pr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HSIEH, BORCHIUAN, HUANG, YENCHUN, HUANG, TAICHUN, LEE, TZELIANG, LEE, CHIAYING
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method embodiment includes forming a protective liner over the substrate and forming an inter-layer dielectric over the protective liner. The protective liner covers a sidewall of a gate spacer. The method further includes patterning a contact opening in the first ILD to expose a portion of the protective liner. The portion of the protective liner in the contact opening is removed to expose an active region at a top surface of the semiconductor substrate. A contact is formed in the contact opening. The contact is electrically connected to the active region.