Interconnect structure and method

Interconnect structure and method

Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes bonding a first semiconductor wafer to a second semiconductor wafer, the first semiconductor wafer compri...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TSAI, SHUTING, LIU, JENCHENG, TSAI, SHUANGJI, HUNG, FENGCHI, YAUNG, DUNNIAN, LIN, JENGSHYAN, HSU, TZUHSUAN, CHEN, UTING, WANG, CHENJONG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes bonding a first semiconductor wafer to a second semiconductor wafer, the first semiconductor wafer comprising a substrate and an interconnect structure coupled to the substrate. The method includes removing a portion of the substrate from the first semiconductor wafer to expose a portion of the interconnect structure.