Method for fabricating a mim capacitor having a local interconnect metal electrode and related structure

According to one exemplary embodiment, a method for fabricating a metal-insulator-metal (MIM) capacitor in a semiconductor die comprises forming a bottom capacitor electrode over a device layer situated below a first metallization layer of the semiconductor die, and forming a top capacitor electrode over an interlayer barrier dielectric formed over the bottom capacitor electrode. The top capacitor electrode is formed from a local interconnect metal for connecting devices formed in the device layer. In one embodiment, the bottom capacitor electrode is formed from a gate metal. The method may further comprise forming a metal plate in the first metallization layer and over the top capacitor electrode, and connecting the metal plate to the bottom capacitor electrode to provide increased capacitance density.